BAR Plus USB 3.1 Flash Drive : Capacity-Variable


1,199 Tk5,799 Tk


  • Design : BAR Plus
  • Interface : USB 3.1
  • Transfer speeds up to 200 MB/s (32/ 64 GB Models)
  • Transfer speeds up to 300 MB/s (128/ 256 GB Models)
  • Waterproof, Shock-proof, Temperature-proof, Magnet-proof & X-Ray-proof
  • Backwards Compatibility (USB 3.0, USB 2.0)
  • Backed by a 5-year limited warranty



Speed In Style

A modern take on a classic. The next generation Bar Plus elevates the flash drive to an everyday essential, offering impressive speeds in a striking design. Fits in your hand, a pure minimalism that cleverly blends style, speed, and reliability.

Move Files In A Flash

Get your time back. Fast and convenient read speeds up to 300 MB/s1 with the latest USB 3.1 standard gives you more time to work, play, watch, and create. Send a 3GB 4K UHD video file from your Bar Plus to your PC in just 10 seconds2 .

1 Up to 300 MB/s for 256/128GB models; Up to 200 MB/s for 64/32GB models.
2 Minimum of 10 secs for 256/128GB models; Minimum of 14 secs for 64/32GB models (tested with combination of Asus Z370-G, Intel i7-8700K@3.70GHz, 8GB DDR4 and Windows 10 Enterprise 64bit).

Rugged Refinement

As rugged as it is stylish. The sturdy metal body keeps your data safe and intact, and the integrated key ring prevents accidental misplacement or loss. The Bar Plus is the ideal combination of stunning design and worry-free durability.

Tough & Trusted

Files stay secure, anywhere you go. Samsung’s leadership in flash memory makes the Bar Plus a trustworthy drive to store your valuable data. It works through it all with a waterproof1 , shock-proof2 , temperature-proof3 , magnet-proof4 , and X-ray-proof5 body, all backed by a 5-year limited warranty6 .

1 Up to 72 hrs in seawater.
2 Up to 1,500 gravitational acceleration.
3 Withstands -25°C to 85°C operating, -40°C to 85°C non-operating
4 Up to 15,000 gauss (equal to MRI).
5 Up to 50 Roentgen (equal to airport X-ray machines).
6 Samsung is not liable for any damages and/or loss of data or expenses incurred due to UFD data recovery.

(References :
(Brand and product names mentioned are trademarks of their respective companies)

Please NOTE :

  • SAMSUNG is a trademark of Samsung Electronics Co., Ltd.

Additional information

Weight 1.2 g
Dimensions 1.6 × 0.6 × 0.5 in
Tek Specs

Type :
Product Type :
USB 3.1 Flash Drive

Design :
BAR Plus

Series :
BAR Plus

Usage Application :
PC, Notebook

Interface :
USB 3.1

Color :
Champagne Silver, Titan Grey

Storage :
Capacity :
32/ 64/ 128/ 256 GB (1 GB=1,000,000,000 bytes)

* Actual usable capacity may be less (due to formatting, operating system, applications or otherwise)

Key Features :
Data Transfer Speed :
Up to 200MB/s read speed for USB 3.1, write speed is lower than read speed (32/ 64 GB Models).
Up to 300MB/s read speed for USB 3.1, write speed is lower than read speed (128/ 256 GB Models).

*Actual speed may vary by the host device and actual usage conditions.

MicroSD :

Water-resistant :

Temperature proof :

USB 3.1 :

Environmental Specs :
Operating Temperature :

Non-operating Temperature :

Shock :
Acceleration : 1,500 g (gravity), Duration time: 0.5 ms, Direction: x,y,z 3 times

Dimensions (W x H x D) :
Product :
1.6” x 0.6” x 0.5”

Weight :
Product :
Approx. 1.2 g

Warranty :
Product :
5 years limited


Ensuring your IT solutions all run smoothly, we make sure that the inner workings of a whole range of electronic devices are designed to provide maximised performance, reliability and longevity

Samsung Electronics is expanding its market leadership in the memory business by demonstrating superior technology and dramatic cost savings. That is generating exciting prospects. We are expanding our highly profitable differentiated products, mainly for mobile devices and accelerating process conversion while also focusing on developing next-generation products. Supported by increased demand for AP and CIS sensors, our System LSI business showed strong growth and cost leadership, allowing us to launch next-generation products more quickly.

Memory Business

Creating an easier world through cutting-edge green memory with the world’s highest performance.

Since 1993, we have firmly maintained our No.1 leadership in the global memory semiconductor market while contributing to the overall growth of the global IT market and building an unrivaled competitive edge. In 2016, we pushed the limit of memory semiconductor technology even further by introducing a host of industry-first products: the 10-nanometer class 16Gb LPDDR4 DRAM chips enable an 8GB mobile DRAM package for high-end smartphones and tablets, and the 15.36TB SAS SSD based on 48-layer 256Gb V-NAND technology delivers the industry’s highest storage capacity for leading enterprise customers. Also, we have further accelerated the growth of the advanced memory segment by bringing leading-edge DRAM and NAND flash-based solutions to the market. Among those, the 8GB HBM2 DRAM and the 8GB LPDDR4/4X mobile DRAM offer exceptionally high speed and bandwidth which are required for next-generation graphics and mobile applications. In the NAND flash sector, consumer SSDs such as the 2TB 960 PRO (M.2 NVMe SSD) and the 2TB T3 (portable SSD) helped the market move toward higher density consumer storage solutions. The 512GB BGA NVMe SSD integrates all essential SSD components in a single, one-gram package, allowing maximised flexibility when designing computing devices. In 2017, we have been proactively responding to broader market needs from mobile, PC, enterprise, and cloud services to Augmented Reality (AR), Virtual Reality (VR), and automotive applications. To this end, we plan to introduce a more extensive lineup of advanced memory products that deliver unparalleled levels of performance and capacity, including the latest 64-layer V-NAND-based SSDs for consumer and enterprise applications, ultra-compact eUFS and high-speed Z-SSD. We will also continue our advancements in the 10-nanometer process technology for DRAM solutions and next-generation V-NAND technologies to maintain our leadership and contribute to the growth of the global memory market.


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